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master's thesis
Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS
2021. urn:nbn:hr:194:998781
Arifović, Dario
University of Rijeka
Faculty of Physics

Cite this document

Arifović, D. (2021). Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS (Master's thesis). Rijeka: University of Rijeka. Retrieved from https://urn.nsk.hr/urn:nbn:hr:194:998781

Arifović, Dario. "Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS." Master's thesis, University of Rijeka, 2021. https://urn.nsk.hr/urn:nbn:hr:194:998781

Arifović, Dario. "Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS." Master's thesis, University of Rijeka, 2021. https://urn.nsk.hr/urn:nbn:hr:194:998781

Arifović, D. (2021). 'Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS', Master's thesis, University of Rijeka, accessed 07 May 2024, https://urn.nsk.hr/urn:nbn:hr:194:998781

Arifović D. Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS [Master's thesis]. Rijeka: University of Rijeka; 2021 [cited 2024 May 07] Available at: https://urn.nsk.hr/urn:nbn:hr:194:998781

D. Arifović, "Istraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS", Master's thesis, University of Rijeka, Rijeka, 2021. Available at: https://urn.nsk.hr/urn:nbn:hr:194:998781

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Metadata
TitleIstraživanje vodikovih nečistoća u tankih filmovima cinkovog oksida korištenjem tehnike SIMS
Title (english)Hydrogen impurities in zinc oxide thin films investigated with SIMS technique
AuthorDario Arifović
MentorRobert Peter (mentor)
Committee memberIvana Jelovica Badovinac (predsjednik povjerenstva)
Committee memberRobert Peter (član povjerenstva)
Committee memberIva Šarić (član povjerenstva)
GranterUniversity of Rijeka
(Faculty of Physics)
Rijeka
Defense date and country2021-09-29, Croatia
Scientific / art field,
discipline and subdiscipline		NATURAL SCIENCES
Physics
Abstract
U radu je korištena metoda depozicije atomskih slojeva (ALD) za narastanje tankih filmova cinkovog oksida (ZnO) na različitim temperaturama. Za sintezu ZnO korištena su dva prekursora: voda (H2O) i dietilcink (DEZ). Depozicije su se radile na podlogama Si, na temperaturama između 60 °C i 220 °C. Za karakterizaciju sintetiziranih filmova ZnO koristila se masena spektrometrija sekundarnih iona (SIMS), kojom je načinjena elementna analiza i izmjereni su dubinski profili uzoraka. Nadalje, izračunate su koncentracije H nečistoća u ZnO filmova, pomoću SIMS analize ZnO uzorka implantiranog s vodikom. Utvrđeno je da s porastom temperature ALD sinteze, opada koncentracija H nečistoća u uzorcima ZnO.
Abstract (english)
In this work, atomic layer deposition (ALD) was used for the growth of ZnO thin films at different temperatures. ZnO samples were synthised using water (H2O) and diethylzinc (DEZ), as the precoursors. Deposition of ZnO was done on silicon wafers at the temperatures between 60 °C and 220 °C. Secondary ion mass specotrmetry (SIMS) was employed for the characterizstion of ZnO samples. The elemental analysis and the depth profiles of ZnO thin films were measured with SIMS technique. Furthermore, The concentrations of H impurities in ALD grown ZnO films were determined using SIMS analysis of ZnO sample implanted with hydrogen. It was found that, the concentration of H impurities in ZnO samples decreases with the increasing temperature of ALD synthesis.
Keywords
Keywords (english)
Languagecroatian
URN:NBNurn:nbn:hr:194:998781
Study programmeTitle: Graduate University Study of Electrical Engineering
Study programme type: university
Study level: graduate
Academic / professional title: magistar/magistra inženjerstva i fizike materijala (magistar/magistra inženjerstva i fizike materijala)
Type of resourceText
File originBorn digital
Access conditionsAccess restricted to students and staff of home institution
Terms of useLicence In copyright icon
Created on2021-10-21 10:52:14